PhD in Electrical Engineering, National University of Singapore, Singapore, 2015
Master in Electrical Engineering, Purdue University, USA, 2007
Bachelor in Electrical Engineering, Purdue University, USA, 2005

罗建禄老师本科和硕士毕业于美国印第安纳州西拉法叶市的普渡大学，博士毕业于新加坡国立大学，所学专业是电子和计算机工程。罗建禄老师长期从事微电子材料，器件，和电路计算和仿真的科研项目，并已在IEEE TED等杂志和国际会议上发表多篇论文有关通过理论研发的沟道材料和器件技术。罗建禄老师主要研究方向是基于应用的计算微纳米电子学，包括了利用理论计算的方法来研发新型的半导体材料，工艺和器件，并全面考虑技术元素如何影响电路性能，以便在短时间和低成本下实现新工艺和设计的开发。除了学术方面，罗建禄老师曾经在美国硅谷从事电路设计软件的研发和在新加坡的格芯工艺半导体代工厂工作，定义DRC / LVS /掩模生成规则和算法。

2019-2020: Hybrid Integrated Flexible Electronic Systems (HiFES) Lab, NUS, Singapore, Research Fellow
• Worked on the defect modeling to shed light on the impact of the defects on the electrical response of advanced transistors,
• Developed an efficient methodology combining the TCAD defect modeling and Machine-Learning predictive model for the defect diagnosis in advanced semiconductor technology nodes.

2016-2019: Globalfoundries Singapore, Senior Engineer
• Worked with internal design enablement, process integration, unit process module, optical proximity correct (OPC), and tapeout team across the USA, Germany, and Singapore to define and develop device truth table, mask generation rules/algorithms required for DRC / LVS / reticle procurement by advanced technology.
• Developed a novel methodology that leverages the knowledge of device physics and processing to transform the mask generation rules checking on the GDSOUT into a systematic and automatic manner.

2007-2010: Legend Design Technology, Inc. , Santa Clara, CA USA, Research & Development Engineer
• Worked on device modeling for Spice circuit simulator, involving the implementations of different MOSFET models to the simulator.
• Incorporated TSMC Modeling Interface (TMI) to the Spice simulator and the implementation certified by TSMC TMI Tool Qualification Program.

Design and development of advanced electronics within the theoretical framework based on design and technology co-optimization (DTCO)
- Material Modeling
- Device Modeling
- Circuit Modeling

Journal Publications:
J. Pan, K. L. Low* et al., “Transfer Learning-Based Artificial Intelligence-Integrated Physical Modeling to Enable Failure Analysis for 3 Nanometer and Smaller Silicon-Based CMOS Transistors,” ACS Appl. Nano Mater., Jun. 2021.
X. Zhang, K.-T. Lam, K. L. Low*, Y.-C. Yeo, and G. Liang, “Nanoscale FETs Simulation Based on Full-Complex-Band Structure and Self-Consistently Solved Atomic Potential”, IEEE Transactions on Electron Devices, vol. 64, no. 1, 58, Jan. 2017.
K. L. Low*, Y.-C. Yeo, and G. Liang, “Ultimate Performance Projection of Ultrathin Body Transistor Based on Group IV, III-V, and 2-D-Materials,” IEEE Trans. Electron Devices, vol. 63, no. 2, 773, Feb. 2016.
Y. Guo, X. Zhang, K. L. Low*, K.-T. Lam, Y.-C. Yeo, and G. Liang, "Effect of Body Thickness on the Electrical Performance of Ballistic n-Channel GaSb Double gate Ultrathin-Body Transistor", IEEE Transactions on Electron Devices, vol. 62, no. 3, pp. 788 - 794, Mar. 2015.
Y. Tong, Q. Zhou, K. L. Low*, L. X. Wang, L. H. Chua, T. Thanigaivelan, T. Henry, and Y.-C. Yeo, "Cold silicon pre-amorphization implant and pre-silicide sulfur implant for advanced nickel silicide contacts," IEEE Transactions on Electron Devices, vol. 61, no. 10, pp. 3499-3506, Aug. 2014.
K. L. Low*, W. Huang, Y.-C. Yeo, and G. Liang, “Ballistic Transport Performance of Silicane and Germanane Transistors,” IEEE Trans. Electron Devices, vol. 61, no. 5, 1590, May 2014.
Y. Yang, G. Han, P. Guo, W. Wang, X. Gong, L. Wang, K. L. Low*, and Y.-C. Yeo, "Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration," IEEE Transactions on Electron Devices, vol. 60, no. 12, pp. 4048-4056, Nov. 2013.
Y. Yang, K. L. Low*, W. Wang, P. Guo, L. Wang, G. Han, and Y.-C. Yeo, "Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study," Journal of Applied Physics, vol. 113, no. 19, pp. 194507, May 2013.
K.-H. Goh, Y. Cheng, K. L. Low*, E. Y. J. Kong, C.-K. Chia, E.-H. Toh, and Y.-C. Yeo, "Physical model for gallium arsenide growth on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate," Journal of Applied Physics, vol. 113, no. 4, pp. 044103, Jan. 2013.
K. L. Low*, C. Zhan, G. Han, Y. Yang, K.-H. Goh, P. Guo, E.-H. Toh, and Y.-C. Yeo, “Device physics and design of a L-shaped Germanium source tunneling transistor,” Japanese J. Applied Physics, vol. 51, no. 2, 02BC04, Feb. 2012.
K. L. Low*, Y. Yang, G. Han, W. Fan, and Y.-C. Yeo, "Electronic band structure and effective mass parameters of Ge1-xSnx alloys," J. Applied Physics, vol. 112, no. 11, 103715, Nov. 2012.
Y. Yang, P.-F. Guo, G.-Q. Han, K.-L. Low*, C.-L. Zhan, and Y.-C. Yeo, "Simulation study of tunneling field-effect transistor with extended source structures," Journal of Applied Physics, vol. 111, no. 11, pp. 114514, Jun. 2012.

Conferences：
C. W. Teo, K. L. Low*, V. Narang, and V. Thean, “TCAD-Enabled Machine Learning Defect Prediction to Accelerate Advanced Semiconductor Device Failure Analysis”, International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Udine, Italy, Sep. 4 -6, 2019.
S. Luo, K. L. Low*, X. Zhang, Q. Zhao, H. Lin, and G. Liang, “A Computational Study of Fundamentals and Design Considerations for Vertical Tunneling Field-Effect Transistor”, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, Japan, Feb. 28 – Mar. 2, 2017.
G. Liang and K. L. Low*, “A Computational Study of Tunneling Field-Effect Transistors: Challenges and Design Optimizations”, 230th Electrochemical Society Meeting, Honolulu, HI USA, Oct. 2 - 7, 2016.
S. Yadav, K.-H. Tan, Annie, K. H. Goh, S. Subramanian, K. L. Low*, N. Chen, B. Jia, S.-F. Yoon, G. Liang, X. Gong, and Y.-C. Yeo, “First Monolithic Integration of Ge P-FETs and InAs N-FETs on Silicon Substrate: Sub-120 nm III-V Buffer, Sub-5 nm Ultra-thin Body, Common Raised S/D, and Gate Stack Modules,” IEEE International Electron Device Meeting 2015 (IEDM), Washington, DC, USA, Dec. 7-9, 2015.
K. L. Low*, Y.-C Yeo, and G. Liang, “Voltage Scalability of Double-Gate Ultra-Thin-Body Field-Effect Transistors with Channel Materials from Group IV, III-V to 2D-Materials based on ITRS Metrics for Year 2018 and Beyond”, 72nd Device Research Conference, UC Santa Barbara, CA, Jun. 2014
Y.-C. Yeo, X. Gong, P. Guo, Y. Yang, L. Wang, Y. Tong, K. L. Low*, C. Zhan, R. Cheng, B. Liu, W. Wang, Q. Zhou, X. Xu, and Y. Dong, "Application of germanium-tin (GeSn) in field-effect transistors," IEEE Nanotechnology Materials and Devices Conference (NMDC), Taiwan, Taiwan, Oct. 6 - 9, 2013.
Y. Yang, P. Guo, W. Wang, X. Gong, L. Wang, K. L. Low*, G. Han, and Y.-C. Yeo, "Germanium-tin tunneling field-effect transistor: Device design and experimental realization," International Conference on Solid-State Devices and Materials (SSDM), Fukuoka, Japan, Sept. 24-27, 2013.
Y. Yang, S. Su, P. Guo, W. Wang, X. Gong, L. Wang, K. L. Low*, G. Zhang, C. Xue, B. Cheng, G. Han, and Y.-C. Yeo, "Towards direct band-to-band tunneling in p-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn)," IEEE International Electron Device Meeting 2012 (IEDM), San Francisco, CA USA, Dec. 10-12, 2012.
K. L. Low*, Y. Yang, G. Han, W.-J. Fan, and Y.-C. Yeo, “Electronic band structure and effective masses of Ge1-xSnx alloys,” 222nd Electrochemical Society Meeting, Honolulu, HI USA, Oct. 7 - 12, 2012
Y. Yang, K. L. Low*, G. Han, and Y.-C. Yeo, "Germanium tin tunneling field effect transistor for sub-0.4 V operation," 222nd Electrochemical Society Meeting (ECS), Honolulu, HI USA, Oct. 7-12, 2012.
Y. Tong, S. Su, B. Liu, L. Wang, P. S. Y. Lim, W. Wang, K. L. Low*, G. Zhang, C. Xue, B. Cheng, G. Han, and Y.-C. Yeo, "Nickel stanogermanide ohmic contact on n-type germanium-tin (Ge1-xSnx) using Se and S implant and segregation," International Conference on Solid-State Devices and Materials (SSDM), Kyoto, Japan, Sept. 25-27, 2012.
K. H. Goh, Y. Cheng, K. L. Low*, E. Y. J. Kong, C.-K. Chia, E.-H. Toh, and Y.-C. Yeo, "Selective growth of gallium arsenide on germanium fins with different orientations formed on 10° offcut germanium-on-insulator substrate," International Conference on Solid-State Devices and Materials (SSDM), Kyoto, Japan, Sept. 25-27, 2012.
G. Han, Y. Yang, P. Guo, C. Zhan, K. L. Low*, K. H. Goh, B. Liu, E.-H. Toh, and Y.-C. Yeo, "PBTI characteristics of n-channel tunneling feld effect transistor with HfO2 gate dielectric: New insights and physical model," International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 23-25, 2012.
K. L. Low*, C. Zhan, G. Han, Y. Yang, K. H. Goh, P. Guo, E.-H. Toh, and Y.-C. Yeo, “Tunnel field-effect transistor with L-shaped germanium source: Device physics and design,” Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials, Nagoya, Japan, Sep. 28 - 30, 2011, pp. 849 - 850